Mitsubishi Electric Corporation announced a strategic cooperation with Nexperia B.V. to collaboratively develop silicon carbide (SiC) power semiconductors for the power electronics sector. Mitsubishi Electric will use its wide-bandgap semiconductor capabilities to create and provide SiC MOSFET chips that Nexperia will employ to develop SiC discrete devices.

 

The electric vehicle market is expanding worldwide and is helping to drive the exponential growth of SiC power semiconductors, which offer lower energy loss, higher operating temperatures and faster switching speeds than conventional silicon power semiconductors. The high efficiency of SiC power semiconductors is expected to contribute significantly to global decarbonization and green transformation, as per business wire.

 

Mitsubishi Electric has taken the lead in areas such as high-speed trains, high-voltage industrial applications, and household appliances. In 2010, the firm introduced the world's first SiC power modules for air conditioners, and in 2015, it became the first provider of an all-SiC power module for Shinkansen bullet trains. Mitsubishi Electric has developed outstanding experience in the research and production of SiC power modules, which are recognized for their advanced performance and excellent reliability.

 

Mitsubishi Electric Corporation is a Japanese multinational electronics and electrical equipment manufacturer based in Tokyo, Japan. It was founded in 1921 as a spin-off from Mitsubishi Shipbuilding's electrical machinery production division at the Kobe Shipyard. MELCO's goods include elevators and escalators, high-end home appliances, air conditioning, factory automation systems, train systems, electric motors, pumps, semiconductors, digital signs, and satellites.